AOE6932 30V Dual Asymmetric N-Channel MOSFET

932 Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 24 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 55 A Rise Time (tr): 11.5 nS

Drain-Source Capacitance (Cd): 380 pF

Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm Package:

DFN5X6E https://aosmd.com/sites/default/files/res/data_sheets/AOE6932.pdf